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FDP7030BLS/FDB7030BLS
May 2001
FDP7030BLS / FDB7030BLS
30V N-Channel PowerTrench(R) SyncFET TM
General Description
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP7030BLS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDP7030BLS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP7030BL in parallel with a Schottky diode.
Features
* 56 A, 30 V. RDS(ON) = 10.5 m @ VGS = 10 V RDS(ON) = 16.5 m @ VGS = 4.5 V * Includes SyncFET Schottky body diode * Low gate charge (15nC typical) * High performance trench technology for extremely low RDS(ON) and fast switching * High power and current handling capability
D
D
G
G D TO-220 S
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T A =25 oC unless otherwise noted
Parameter
Ratings
30 20
(Note 1) (Note 1)
Units
V V A W W/C C C
56 160 65 0.43 -65 to +100 275
Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.3 62.5 C/W C/W
Package Marking and Ordering Information
Device Marking FDB7030BLS FDP7030BLS Device FDB7030BLS FDP7030BLS Reel Size 13'' Tube Tape width 24mm n/a Quantity 800 units 45
(c)2001 Fairchild Semiconductor Corporation
FDP7030BLS Rev B(W)
FDP7030BLS/FDB7030BLS
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
T A = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 1 mA
Min
30
Typ
Max Units
V
Off Characteristics
ID = 10 mA, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = -20 V VGS = 0 V VDS = 0 V VDS = 0 V 22 500 100 -100 mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS,
ID = 1 mA
1
2.3 -4.4 8.6 13.2 12.4
3
V mV/C
ID = 1 mA, Referenced to 25C VGS = 10 V, ID = 28 A VGS = 4.5 V, ID = 23 A VGS=10 V, ID = 28A, TJ = 100C VGS = 10 V, VDS = 5 V, VDS = 5 V ID = 28 A 50
10.5 16.5 16.5
m
ID(on) gFS
A 47 S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, f = 1.0 MHz
VGS = 0 V,
1708 474 134
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
11 8 30 16
21 16 48 29 21
ns ns ns ns nC nC nC
VDS = 15 V, VGS = 5 V
ID = 28 A
15 7 5
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD trr Qrr
Notes: 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 2. See "SyncFET Schottky body diode characteristics" below.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 11.5A, diF/dt = 300 A/s
(Note 1) (Note 1)
3.5 0.44 0.60 20 20 0.7
A V ns nC
(Note 2)
FDP7030BLS Rev B(W)
FDP7030BLS/FDB7030BLS
Typical Characteristics
120
2
6.0V 5.0V
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
1.8 1.6 1.4 1.2 1 0.8
VGS = 4.5V
ID, DRAIN CURRENT (A)
90
5.0V
60
4.5V
6.0V 7.0V 8.0V 10V
4.0V
30
0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V)
0
20
40
60
80
100
120
I D, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.04 RDS(ON) , ON-RESISTANCE (OHM)
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.4 ID = 28A VGS =10V 1.2
I D = 14A
0.03
1
TA = 100 C 0.02 TA = 25 C
o
o
0.8
0.6 -50 -25 0 25 50
o
0.01
75 100
2
4
6
8
10
T J, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
60
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 IS, REVERSE DRAIN CURRENT (A)
VD S = 5V
50 ID, DRAIN CURRENT (A)
TA = 55 C
o
o
25 C 100 C
o
VGS = 0V TA = 100 C
o
1
40 30 20 10 0 2 2.5 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V)
25 C 0.1
o
o
-55 C 0.01
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP7030BLS Rev B(W)
FDP7030BLS/FDB7030BLS
Typical Characteristics
(continued)
10 VGS, GATE-SOURCE VOLTAGE (V)
2500
ID = 28A
8
VDS = 5V 10V
2000 CAPACITANCE (pF)
f = 1MHz VGS = 0 V CISS
15V
6
1500
4
1000
COSS
500
2
CRSS
0 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC)
0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W) 5000
Figure 8. Capacitance Characteristics.
4000
SINGLE PULSE R JA = 2.3C/W T A = 25C
I D, DRAIN CURRENT (A)
100
R DS(ON) LIMIT
10ms 100m 1s 10s 50s
3000
2000
10
V GS = 10V SINGLE PULSE o RJA = 2.3 C/W TA = 25 C
o
DC
1000
1 0.1 VD S, 1 10 DRAIN-SOURCE VOLTAGE (V) 100
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
R JA (t) = r(t) + R JA R JA = 2.3 C/W
0.1
0.1 0.05 0.02 0.01
P(pk t1 t2 TJ - T A = P * R JA (t) Duty Cycle, D = t 1 / t2
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
FDP7030BLS Rev B(W)
FDP7030BLS/FDB7030BLS
Typical Characteristics
(continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDP7030BLS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature.
0.1
Current: 0.8A/div
IDSS, REVERSE LEAKAGE CURRENT (A)
0.01
T A = 100 C
o
0.001
0.0001
TA = 25 C
o
Time: 10ns/div
0.00001 0 10 20 30
Figure 12. FDP7030BLS SyncFET body diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDP7030BL).
V DS, REVERSE VOLTAGE (V)
Figure 13. Non-SyncFET (FDP7030BL) body diode reverse recovery characteristic.
Current: 0.8A/div
Time: 10ns/div
FDP7030BLS Rev B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM StealthTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H2

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